FDME1023PZT

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FDME1023PZT datasheet

• Маркировка
  FDME1023PZT
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FDME1023PZT Configuration: Single Continuous Drain Current: - 2.3 A Current - Continuous Drain (id) @ 25?° C: 2.6A Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: - 20 V Fet Feature: Logic Level Gate Fet Type: 2 P-Channel (Dual) Forward Transconductance Gfs (max / Min): 7 S Gate Charge (qg) @ Vgs: 7.7nC @ 4.5V Gate Charge Qg: 5.5 nC Input Capacitance (ciss) @ Vds: 405pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 6-MLP, 6-MicroFET?„? Power - Max: 600mW Power Dissipation: 1.3 W Rds On (max) @ Id, Vgs: 142 mOhm @ 2.3A, 4.5V Resistance Drain-source Rds (on): 95 mOhms Series: PowerTrench?® Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 1V @ 250?µA
• Количество страниц
  7 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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